| PART |
Description |
Maker |
| E28F640J3A-120 |
IC,EEPROM,FLASH,4MX16/8MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
| TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation
Toshiba, Corp.
|
| TC58FVT641XB-70 TC58FVB641XB-70 TC58FVB641FT-70 TC |
CAT5E PATCH CORD 15 FOOT BLACK
64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| V53C365805A |
3.3 Volt 8M X 8 EDO Page Mode CMOS Dynamic RAM(3.3V 8Mx8 EDO页面模式CMOS动态RAM)
|
Mosel Vitelic, Corp.
|
| K3N7C4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| AP65500 |
LIGHT LOAD IMPROVED 5A SYNCH DC/DC BUCK CONVERTER
|
Diodes
|
| W986416DH |
SDRAM 4Mx16
|
Winbond Electronics
|
| EMC646SP16JS-45L EMC646SP16JS-45LF EMC646SP16JS-45 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EMC646SP16JV-12L EMC646SP16JV-12LF EMC646SP16JV-12 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| CMS6416LAX-15EX CMS6416LAF CMS6416LAG CMS6416LAH |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
